Impact of the CNT Parameter Variations on Performance of Digital Circuits Based on CNTFET

Document Type : Research Paper

Authors

1 Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA), National Research Council of Italy, 70125, Bari, Italy

2 Electronic Devices Laboratory, Department of Electrical and Information Engineering, Polytechnic University of Bari, 70126, Bari, Italy

Abstract

   In this paper we propose a method to study the impact of the CNT parameter variations on performance of CNTFET digital circuits. In particular we consider CNT parameters that fully identify the geometrical properties of a regular CNT, which are the length and structural indices (n, m) of CNT. We analyse in particular the effects on NAND gate using a N and P type CNTFET, polarizing at a fixed voltage and varying the CNT parameters.  As regards the indices, we limit the analysis to zig-zag CNT, highlighting that the proposed procedure can be applied to other types of CNT.

Keywords

Main Subjects

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International Journal of Nanoscience and Nanotechnology
Volume 20, Issue 1
March 2024
Pages 33-46

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